EM250
Table 6 contains the digital I/O specifications for the EM250. The digital I/O power (named VDD_PADS) comes
from three dedicated pins (Pins 17, 23, and 28). The voltage applied to these pins sets the I/O voltage.
Table 6. Digital I/O Specifications
Parameter
Voltage supply
Input voltage for logic 0
Input voltage for logic 1
Name
VDD_PADS
V IL
V IH
Min.
2.1
0
0.8 x VDD_PADS
Typ.
Max.
3.6
0.2 x VDD_PADS
VDD_PADS
Unit
V
V
V
Input current for logic 0
Input current for logic 1
Input pull-up resistor value
Input pull-down resistor value
I IL
I IH
R IPU
R IPD
30
30
- 0.5
0.5
μ A
μ A
k ?
k ?
Output voltage for logic 0
Output voltage for logic 1
V OL
V OH
0
0.82 x VDD_PADS
0.18 x VDD_PADS
VDD_PADS
V
V
Output source current (standard current pad)
Output sink current (standard current pad)
Output source current
high current pad: GPIO[16:13]
Output sink current
high current pad: GPIO[16:13]
Total output current (for I/O Pads)
Input voltage threshold for OSC32A
Input voltage threshold for OSCA
Output voltage level (TX_ACTIVE)
Output source current (TX_ACTIVE)
3.5
RF Electrical Characteristics
3.5.1
Receive
I OHS
I OLS
I OHH
I OLH
I OH + I OL
0.2 x VDD_PADS
0.2 x VDD_CORE
0.18 x VDD_CORE
4
4
8
8
40
0.8 x VDD_PADS
0.8 x VDD_CORE
0.82 x VDD_CORE
1
mA
mA
mA
mA
mA
V
V
V
mA
Table 7 lists the key parameters of the integrated IEEE 802.15.4 receiver on the EM250.
120-0082-000V Rev 1.1
Note:
Note:
Receive Measurements were collected with Silicon Labs’ EM250 Lattice Balun Reference Design
(Version B1) at 2440MHz and using the EmberZNet software stack Version 3.0.1. The Typical number
indicates one standard deviation above the mean, measured at room temperature (25 ? C). The Min and
Max numbers were measured over process corners at room temperature.
The adjacent channel rejection (ACR) measurements were performed by using an unfiltered, ideal
IEEE 802.15.4 signal of continuous pseudo-random data as the interferer. For more information on ACR
measurement techniques, see document AN709, Adjacent Channel Rejection Measurements .
Page 14
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EM250-COMP-XIDE 制造商:Silicon Laboratories Inc 功能描述:COMPILER XIDE FOR EM250 1SEAT
EM250-DEV 功能描述:KIT DEV FOR EM250 RoHS:否 类别:RF/IF 和 RFID >> RF 评估和开发套件,板 系列:InSight 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796
EM250-EK-R 功能描述:KIT EVAL EM250 RF TEST RoHS:是 类别:RF/IF 和 RFID >> 过时/停产零件编号 系列:InSight 标准包装:1 系列:- 类型:用于 200/300 系列的欧盟开发套件 适用于相关产品:Zensys RF 模块 所含物品:开发板,模块,编程器,软件,线缆,电源 其它名称:703-1019Q3225667
EM250-JMP-R 功能描述:KIT JUMP START FOR EM250 RoHS:否 类别:RF/IF 和 RFID >> RF 评估和开发套件,板 系列:JumpStart 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796
EM250-RCM-R 功能描述:EM250 RCM BOARD RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件,板 系列:- 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796
EM250-RTR 功能描述:IC ZIGBEE SYSTEM-ON-CHIP 48-QFN RoHS:是 类别:RF/IF 和 RFID >> RF 收发器 系列:EM250 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:30 系列:- 频率:4.9GHz ~ 5.9GHz 数据传输率 - 最大:54Mbps 调制或协议:* 应用:* 功率 - 输出:-3dBm 灵敏度:- 电源电压:2.7 V ~ 3.6 V 电流 - 接收:* 电流 - 传输:* 数据接口:PCB,表面贴装 存储容量:- 天线连接器:PCB,表面贴装 工作温度:-25°C ~ 85°C 封装/外壳:68-TQFN 裸露焊盘 包装:管件
EM250-STACK-R 制造商:Silicon Laboratories Inc 功能描述:EM250 BOARD STACK (RCM + BREAKOUT) - Boxed Product (Development Kits) 制造商:Silicon Laboratories Inc 功能描述:BOARD STACK EM250 RCM & BREAKOUT
EM25-12V-DC 制造商:ECLIPSE MAGNETICS 功能描述:HOLDING ELECTRO MAGNET